FDS6630A
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6630A
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):6.5 A 7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 4.9 mm |
| Width | 3.9 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 38 mΩ |
| Height | 1.575 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 6.5 A |
| Lifecycle Status | EOL (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.7 V |
| Number of Channels | 1 |
| Input capacitance | 460 pF |
| Continuous Drain Current (ID) | 6.5 A |
| Rds On Max | 38 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 38 mΩ |
| Nominal Vgs | 1.7 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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